LEVELJEE Main
Visualized Solution
The Sigma Insight: Energy Bands in Solids and Semiconductors
The Dual Nature of Current in Semiconductors
When you connect a simple copper wire to a battery, the story is quite straightforward: a sea of free electrons begins to drift, creating an electric current. But when you replace that copper wire with a piece of semiconductor material, the plot thickens. Semiconductors are fascinating because they don't just have one type of charge carrier; they have two!
Imagine you are standing inside a silicon crystal. When an electric field is applied, you would see negatively charged electrons rushing in one direction (opposite to the field), and positively charged holes (which are essentially missing electrons) migrating in the exact opposite direction. Because they have opposite charges and move in opposite directions, their individual currents actually add up to give the total current!
The Master Equation of Drift
To solve any problem involving the flow of charge carriers, we need a reliable mathematical tool. The fundamental equation connecting the macroscopic world of electric current to the microscopic world of moving charges is:
Let's break down this beautiful equation:
is the electric current.
is the charge carrier concentration (number of carriers per unit volume).
is the elementary charge (the charge of a single electron or hole).
is the cross-sectional area of the material.
* is the drift velocity (the average speed at which the carriers are pushed by the electric field).
Setting Up the Ratio
In our specific problem, we are given the ratio of the electron concentration to the hole concentration () and the ratio of their respective currents (). We need to find the ratio of their drift velocities.
Since both the electrons and the holes are flowing through the exact same piece of semiconductor, the cross-sectional area is identical for both. Furthermore, the magnitude of the charge is the same for an electron and a hole.
Let's write down the current equations for both carriers and divide them:
The Elegance of Cancellation
This is where the magic happens. The constants and appear in both the numerator and the denominator, so they cancel out perfectly! We are left with a much cleaner, more elegant relationship:
Now, we simply substitute the values given in the problem:
The Final Sprint
To isolate the ratio of the drift velocities, we just need to perform a quick cross-multiplication. We multiply both sides by :
The in the numerator cancels with the in the denominator, leaving us with our final answer:
The Physical Insight
Why are Electrons Faster?
We found that the ratio is , which means . The electrons are drifting faster than the holes! But why?
In a semiconductor, electrons travel through the conduction band, where they are relatively free and have a lower "effective mass." Holes, on the other hand, travel through the valence band by jumping from one atomic bond to another. This process is inherently more sluggish, giving holes a higher effective mass and lower mobility. Therefore, for the exact same applied electric field, electrons will always attain a higher drift velocity than holes. It's a beautiful confirmation of quantum mechanics hidden inside a simple algebra problem!
Similar Questions
JEE Main 2021
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In a semiconductor, the number density of intrinsic charge carriers at is . If the semiconductor is doped with impurity atom, the hole density increases to . The electron density in the doped semiconductor is ...... .
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Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If for an -type semiconductor, the density of electrons is and their mobility is , then the resistivity of the semiconductor (since, it is an -type semiconductor contribution of holes is ignored) is close to
(A)
(B)
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The electrical conductivity of a semiconductor increases when electro magnetic radiation of wavelength shorter than is incident on it. The band gap (in ) for the semiconductor is
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The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than , is incident on it. The band gap in (eV) for the semiconductor is
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Which of the following statements is not true ?
(A)
The resistance of intrinsic semiconductors decreases with increase of temperature.
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Doping pure Si with trivalent impurities give -type semiconductors.
(C)
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(D)
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Statement I: By doping silicon semiconductor with pentavalent material, the electrons density increases. Statement II: The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below.
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Statement I is true but statement II is false.
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Statement I is false but statement II is true.
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JEE Advanced 1997
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Holes are charge carriers in
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intrinsic semiconductors
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ionic solids
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p-type semiconductors
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metals
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If the lattice constant of this semiconductor is decreased, then which of the following is correct?
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All increase
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and increase but decreases
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and decrease but increases
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A piece of copper and another of germanium are cooled from room temperature to 77 K, the resistance of
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When a potential difference is applied across, the current passing through
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(A)
an insulator at is zero
(B)
a semiconductor at is zero
(C)
a metal at is finite
(D)
a - diode at is finite, if it is reverse biased
